OSI Optoelectronics FCI-INGAAS-1000 Infrared Photodiode, 65 °, Through Hole
- RS Stock No.:
- 177-5576
- Mfr. Part No.:
- FCI-INGAAS-1000
- Manufacturer:
- OSI Optoelectronics
Subtotal (1 tray of 10 units)*
€950.02
(exc. VAT)
€1,168.52
(inc. VAT)
- 50 unit(s) ready to ship from another location
Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | €95.002 | €950.02 |
*price indicative
- RS Stock No.:
- 177-5576
- Mfr. Part No.:
- FCI-INGAAS-1000
- Manufacturer:
- OSI Optoelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | OSI Optoelectronics | |
| Spectrums Detected | Infrared | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 1550nm | |
| Mount Type | Through Hole | |
| Packaging | Tape & Reel | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 900nm | |
| Maximum Wavelength Detected | 1700nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Height | 3.81mm | |
| Width | 5mm | |
| Diameter | 5.4mm | |
| Angle of Half Sensitivity | 65 ° | |
| Breakdown Voltage | 30V | |
| Series | FCI-InGaAS | |
| Automotive Standard | No | |
| Dark Current | 0.2nA | |
| Polarity | Reverse | |
| Typical Rise Time | 0.6ns | |
| Select all | ||
|---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Infrared | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 1550nm | ||
Mount Type Through Hole | ||
Packaging Tape & Reel | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 900nm | ||
Maximum Wavelength Detected 1700nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Height 3.81mm | ||
Width 5mm | ||
Diameter 5.4mm | ||
Angle of Half Sensitivity 65 ° | ||
Breakdown Voltage 30V | ||
Series FCI-InGaAS | ||
Automotive Standard No | ||
Dark Current 0.2nA | ||
Polarity Reverse | ||
Typical Rise Time 0.6ns | ||
OSI Large Active Area InGaAs Photodiodes
Photodiodes, OSI Optoelectronics
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