Intelligent Memory IM2516SDBATG-6I SDRAM 256 MB Surface, 54-Pin 16 bit FBGA
- RS Stock No.:
- 588-660
- Mfr. Part No.:
- IM2516SDBATG-6I
- Manufacturer:
- Intelligent Memory
Subtotal (1 pack of 2 units)*
€7.12
(exc. VAT)
€8.76
(inc. VAT)
In Stock
- 16 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | €3.56 | €7.12 |
*price indicative
- RS Stock No.:
- 588-660
- Mfr. Part No.:
- IM2516SDBATG-6I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 256MB | |
| Product Type | SDRAM | |
| Organisation | 16M x 16 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 166MHz | |
| Maximum Random Access Time | 6ns | |
| Number of Words | 16M | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Pin Count | 54 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | IM2516SDBAT | |
| Standards/Approvals | RoHS | |
| Maximum Supply Voltage | 3.6V | |
| Supply Current | 85mA | |
| Minimum Supply Voltage | 3V | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 256MB | ||
Product Type SDRAM | ||
Organisation 16M x 16 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 166MHz | ||
Maximum Random Access Time 6ns | ||
Number of Words 16M | ||
Mount Type Surface | ||
Package Type FBGA | ||
Pin Count 54 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series IM2516SDBAT | ||
Standards/Approvals RoHS | ||
Maximum Supply Voltage 3.6V | ||
Supply Current 85mA | ||
Minimum Supply Voltage 3V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 4Mbit x 16. It achieves high-speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring efficient and reliable performance.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command