Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 827-5154
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 827-5154
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current (Idc) | 50 mA | |
| Transistor Polarity | NPN | |
| Maximum Collector Emitter Voltage (Vceo) | 13 V | |
| Pin Count | 4 | |
| Package Type | SOT-343 | |
| Automotive Standard | AEC-Q101 | |
| Height | 900 μm | |
| Length | 2 mm | |
| Maximum Collector Base Voltage (VCBO) | 13 V | |
| Maximum Emitter Base Voltage (VEBO) | 1.2 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 200 mW | |
| Maximum Transition Frequency (ft) | 70 GHz | |
| Minimum DC Current Gain (hFE) | 110 | |
| Minimum Operating Temperature | -65 °C | |
| Mount Type | Surface | |
| Series | BFP640 | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Transistor Configuration | Single | |
| Width | 2.1 mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current (Idc) 50 mA | ||
Transistor Polarity NPN | ||
Maximum Collector Emitter Voltage (Vceo) 13 V | ||
Pin Count 4 | ||
Package Type SOT-343 | ||
Automotive Standard AEC-Q101 | ||
Height 900 μm | ||
Length 2 mm | ||
Maximum Collector Base Voltage (VCBO) 13 V | ||
Maximum Emitter Base Voltage (VEBO) 1.2 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 200 mW | ||
Maximum Transition Frequency (ft) 70 GHz | ||
Minimum DC Current Gain (hFE) 110 | ||
Minimum Operating Temperature -65 °C | ||
Mount Type Surface | ||
Series BFP640 | ||
Standards/Approvals Pb-Free (RoHS) | ||
Transistor Configuration Single | ||
Width 2.1 mm | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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