Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Nexperia
	Transistor Type	PNP
	Maximum Continuous Collector Current	-500 mA
	Maximum Collector Emitter Voltage	60 V
	Maximum Emitter Base Voltage	-10 V
	Package Type	SOT-23 (TO-236AB)
	Mounting Type	Surface Mount
	Pin Count	3
	Transistor Configuration	Single
	Number of Elements per Chip	2
	Minimum DC Current Gain	2000
	Maximum Base Emitter Saturation Voltage	-1.5 V
	Maximum Collector Base Voltage	-80 V
	Maximum Collector Emitter Saturation Voltage	-1 V
	Maximum Collector Cut-off Current	-100nA
	Maximum Operating Temperature	+150 °C
	Maximum Power Dissipation	250 mW
	Length	3mm
	Minimum Operating Temperature	-65 °C
	Dimensions	3 x 1.4 x 1mm
	Height	1mm
	Width	1.4mm

	Select all
	Brand Nexperia
	Transistor Type PNP
	Maximum Continuous Collector Current -500 mA
	Maximum Collector Emitter Voltage 60 V
	Maximum Emitter Base Voltage -10 V
	Package Type SOT-23 (TO-236AB)
	Mounting Type Surface Mount
	Pin Count 3
	Transistor Configuration Single
	Number of Elements per Chip 2
	Minimum DC Current Gain 2000
	Maximum Base Emitter Saturation Voltage -1.5 V
	Maximum Collector Base Voltage -80 V
	Maximum Collector Emitter Saturation Voltage -1 V
	Maximum Collector Cut-off Current -100nA
	Maximum Operating Temperature +150 °C
	Maximum Power Dissipation 250 mW
	Length 3mm
	Minimum Operating Temperature -65 °C
	Dimensions 3 x 1.4 x 1mm
	Height 1mm
	Width 1.4mm

Nexperia BCV46,215 Dual PNP Darlington Transistor, -500 mA 60 V HFE:2000, 3-Pin SOT-23 (TO-236AB)

Darlington Transistors, Nexperia

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