Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Transistor Type	NPN
	Maximum Continuous Collector Current	500 mA
	Maximum Collector Emitter Voltage	60 V
	Maximum Emitter Base Voltage	10 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Configuration	Single
	Transistor Configuration	Single
	Number of Elements per Chip	1
	Minimum DC Current Gain	2000
	Maximum Base Emitter Saturation Voltage	1.5 V
	Maximum Collector Emitter Saturation Voltage	1 V
	Maximum Collector Cut-off Current	0.01mA
	Dimensions	2.9 x 1.3 x 0.9mm
	Maximum Operating Temperature	+150 °C
	Length	2.9mm
	Height	0.9mm
	Maximum Power Dissipation	360 mW
	Width	1.3mm

	Select all
	Brand Infineon
	Transistor Type NPN
	Maximum Continuous Collector Current 500 mA
	Maximum Collector Emitter Voltage 60 V
	Maximum Emitter Base Voltage 10 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Configuration Single
	Transistor Configuration Single
	Number of Elements per Chip 1
	Minimum DC Current Gain 2000
	Maximum Base Emitter Saturation Voltage 1.5 V
	Maximum Collector Emitter Saturation Voltage 1 V
	Maximum Collector Cut-off Current 0.01mA
	Dimensions 2.9 x 1.3 x 0.9mm
	Maximum Operating Temperature +150 °C
	Length 2.9mm
	Height 0.9mm
	Maximum Power Dissipation 360 mW
	Width 1.3mm

Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23

Darlington Transistors, Infineon

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