2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K x 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package

Select all	Attribute	Value
	Manufacturer	Infineon
	Memory Size	2Mbit
	Organisation	256 kB x 8
	Interface Type	Serial-SPI
	Data Bus Width	8bit
	Maximum Random Access Time	11ns
	Mounting Type	Surface Mount
	Package Type	DFN
	Pin Count	8
	Dimensions	6 x 5 x 0.7mm
	Length	5mm
	Width	6mm
	Maximum Operating Supply Voltage	3.6 V
	Height	0.7mm
	Maximum Operating Temperature	+105 °C
	Number of Words	256K
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V
	Number of Bits per Word	8bit

	Select all
	Manufacturer Infineon
	Memory Size 2Mbit
	Organisation 256 kB x 8
	Interface Type Serial-SPI
	Data Bus Width 8bit
	Maximum Random Access Time 11ns
	Mounting Type Surface Mount
	Package Type DFN
	Pin Count 8
	Dimensions 6 x 5 x 0.7mm
	Length 5mm
	Width 6mm
	Maximum Operating Supply Voltage 3.6 V
	Height 0.7mm
	Maximum Operating Temperature +105 °C
	Number of Words 256K
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V
	Number of Bits per Word 8bit

Infineon 2Mbit Serial-SPI FRAM Memory 8-Pin DFN, FM25V20A-DGQ

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