Vishay SUM70060E-GE3 IGBT

The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

• AC/DC switch-mode power supplies
• Battery management
• DC/AC inverters
• DC/DC converters
• Lighting
• Motor drive switches
• Synchronous rectifier
• Uninterruptible power supplies