Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 5 units)*

€12.78

(exc. VAT)

€15.72

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20€2.556€12.78
25 - 45€2.302€11.51
50 - 120€2.148€10.74
125 - 245€1.994€9.97
250 +€1.84€9.20

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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