Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

€17.16

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€21.105

(inc. VAT)

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5 - 5€3.432€17.16
10 - 20€3.092€15.46
25 - 45€2.882€14.41
50 - 120€2.676€13.38
125 +€2.472€12.36

*price indicative

Packaging Options:
RS Stock No.:
215-6673
Distrelec Article No.:
304-31-965
Mfr. Part No.:
IKW30N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

55A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC

Length

42mm

Width

16.13 mm

Height

5.21mm

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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