Infineon IKW50N65EH5XKSA1, N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
€10.93
(exc. VAT)
€13.44
(inc. VAT)
In Stock
- 166 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €5.465 | €10.93 |
| 10 - 18 | €4.915 | €9.83 |
| 20 - 48 | €4.595 | €9.19 |
| 50 - 98 | €4.265 | €8.53 |
| 100 + | €3.935 | €7.87 |
*price indicative
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 275W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Length | 41.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 275W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Length 41.42mm | ||
Automotive Standard No | ||
Infineon High Speed Fifth Generation Series IGBT, 650V Maximum Collector Emitter Voltage, 80A Max Continuous Collector Current - IKW50N65EH5XKSA1
This IGBT is a power semiconductor device designed to switch and control high-voltage, high-current loads in power electronic systems. It is intended for applications requiring a robust thermal range and significant continuous current handling, and is supplied in a through-hole TO-247 package suitable for conventional mounting and heatsinking.
Features and Benefits:
• 650V collector-emitter rating enables handling of high-voltage circuits
• 80A continuous collector current supports large load-driven applications
• 1.65V Vce(sat) reduces conduction losses during high current flow
• 275W power dissipation allows sustained thermal loading under duty
• 30V gate-emitter maximum permits strong gate-drive margins
• Operates from -40°C to 175°C for wide temperature environments
• 80A continuous collector current supports large load-driven applications
• 1.65V Vce(sat) reduces conduction losses during high current flow
• 275W power dissipation allows sustained thermal loading under duty
• 30V gate-emitter maximum permits strong gate-drive margins
• Operates from -40°C to 175°C for wide temperature environments
Applications
• Suitable for inverter stages in industrial drives
• Ideal for high-voltage power conversion modules
• Used with large motor controllers requiring high current
• Can be used for switch-mode power supplies in heavy-duty systems
• Suitable for rack-mounted power electronics with through-hole assembly
• Ideal for high-voltage power conversion modules
• Used with large motor controllers requiring high current
• Can be used for switch-mode power supplies in heavy-duty systems
• Suitable for rack-mounted power electronics with through-hole assembly
What package and mounting method does it use?
It is supplied in a TO-247 package and is designed for through-hole mounting.
What gating limits must I observe to avoid damage?
The gate-emitter voltage must not exceed 30V under any operating condition.
How does it perform in elevated ambient temperatures?
It is rated to operate up to 175°C, with specified power dissipation up to 275W to manage thermal load.
Is it suitable for automotive-standard designs?
It is not classified to automotive standards and should not be assumed compliant for those applications.
Related links
- Infineon 80 A 650 V Through Hole
- Infineon IGW50N65H5FKSA1 80 A 650 V Through Hole
- Infineon IKW50N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKW75N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKWH75N65EH7XKSA1 80 A 650 V Through Hole
- Infineon 80 A 650 V Through Hole
- STMicroelectronics 80 A 650 V Through Hole
- STMicroelectronics STGW40H65FB 80 A 650 V Through Hole