Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC, 20 A 1200 V, 3-Pin PG-TO-247
- RS Stock No.:
- 244-2914
- Mfr. Part No.:
- IHW20N120R5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
€4.61
(exc. VAT)
€5.67
(inc. VAT)
Temporarily out of stock
- 14 unit(s) shipping from 02 October 2026
- Plus 240 unit(s) shipping from 21 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €2.305 | €4.61 |
| 10 - 38 | €2.215 | €4.43 |
| 40 - 78 | €2.135 | €4.27 |
| 80 - 118 | €2.045 | €4.09 |
| 120 + | €1.95 | €3.90 |
*price indicative
- RS Stock No.:
- 244-2914
- Mfr. Part No.:
- IHW20N120R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 288W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 % | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Width | 16.13mm | |
| Series | Resonant Switching | |
| Height | 5.21mm | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 288W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 % | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Width 16.13mm | ||
Series Resonant Switching | ||
Height 5.21mm | ||
Length 42mm | ||
Automotive Standard No | ||
Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 20A Max Continuous Collector Current - IHW20N120R5XKSA1
This IGBT single-transistor IC is a high-voltage switching device designed for power conversion and control in demanding electrical systems. It operates across a wide temperature span and is intended for applications requiring elevated voltage handling and substantial continuous current capacity. The component is supplied in a PG-TO-247 package and complies with specified material and hazardous-substance standards.
Features and Benefits:
• 1200 V collector-emitter withstand enables high-voltage switching
• 20 A continuous collector current supports sustained power delivery
• 1.55 V Vce(sat) reduces conduction losses during on-state operation
• 288 W maximum power dissipation allows heavy-load thermal margin
• ±20 V gate-emitter rating permits standard gate-drive amplitudes
• Operates from −40 °C to 175 °C for extended temperature resilience
• 20 A continuous collector current supports sustained power delivery
• 1.55 V Vce(sat) reduces conduction losses during on-state operation
• 288 W maximum power dissipation allows heavy-load thermal margin
• ±20 V gate-emitter rating permits standard gate-drive amplitudes
• Operates from −40 °C to 175 °C for extended temperature resilience
Applications
• Suitable for resonant switching topologies in power converters
• Used for 1200 V 20 A IGBT transistor roles in industrial inverters
• Ideal for high-power IGBT 288 W modules in motor drives
• Can be used for PG-TO-247 IGBT module replacements in assemblies
• Appropriate for high-temperature IGBT −40 to 175 °C environments
• Used for 1200 V 20 A IGBT transistor roles in industrial inverters
• Ideal for high-power IGBT 288 W modules in motor drives
• Can be used for PG-TO-247 IGBT module replacements in assemblies
• Appropriate for high-temperature IGBT −40 to 175 °C environments
What packaging is provided for straightforward board or heatsink mounting?
It is supplied in a PG-TO-247 package suitable for standard through-hole mounting and conventional heatsinking.
Which material and hazardous-substance standards does it meet?
The device is RoHS-compliant and meets IEC 61249-2-21 material specifications.
What electrical limit defines gate-drive safety?
The gate-emitter voltage is limited to ±20 V to prevent gate oxide stress.
How should designers assess thermal capacity for sustained operation?
Use the 288 W maximum power dissipation rating to size heatsinks and cooling for continuous loads.
What temperature extremes can the device tolerate in operation?
It functions from a minimum of −40 °C up to a maximum of 175 °C for elevated-temperature applications.
Related links
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