onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6973
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Subtotal (1 tray of 36 units)**

€5,241.71

(exc. VAT)

€6,447.31

(inc. VAT)

36 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tray**
36 +	€145.603	€5,241.708

**price indicative

RS Stock No.:: 245-6973
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

Datasheet - NXH350N100H4Q2F2P1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	592 W
Number of Transistors	4
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

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