STMicroelectronics IGBT, 50 A 1200 V, 3-Pin, Through Hole
- RS Stock No.:
- 248-4895
- Mfr. Part No.:
- STGYA50M120DF3
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
€181.92
(exc. VAT)
€223.77
(inc. VAT)
In Stock
- 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | €6.064 | €181.92 |
| 60 - 60 | €5.989 | €179.67 |
| 90 + | €5.916 | €177.48 |
*price indicative
- RS Stock No.:
- 248-4895
- Mfr. Part No.:
- STGYA50M120DF3
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Series | STGYA50M120DF3 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Series STGYA50M120DF3 | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
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