Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-220, Surface
- RS Stock No.:
- 273-2959
- Mfr. Part No.:
- IGP06N60TXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
€2.66
(exc. VAT)
€3.28
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €1.33 | €2.66 |
| 10 - 18 | €1.15 | €2.30 |
| 20 - 98 | €1.135 | €2.27 |
| 100 - 498 | €0.895 | €1.79 |
| 500 + | €0.76 | €1.52 |
*price indicative
- RS Stock No.:
- 273-2959
- Mfr. Part No.:
- IGP06N60TXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 12A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 4.57mm | |
| Length | 15.95mm | |
| Series | TrenchStop | |
| Width | 10.36 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 12A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 4.57mm | ||
Length 15.95mm | ||
Series TrenchStop | ||
Width 10.36 mm | ||
Automotive Standard No | ||
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode fu
High ruggedness and temperature stable behaviour
High device reliability
Very tight parameter distribution