Fairchild Semiconductor, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-263, Surface

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Subtotal 10 units (supplied on a continuous strip)*

€19.62

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€24.13

(inc. VAT)

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Packaging Options:
RS Stock No.:
862-9353P
Mfr. Part No.:
ISL9V3040S3ST
Manufacturer:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Maximum Continuous Collector Current Ic

21A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±10 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Energy Rating

300mJ

Automotive Standard

AEC-Q101

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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