onsemi MMBFJ112, Single Type N-Channel N-Channel Switch-Channel JFET 5 mA, 3-Pin SOT-23
- RS Stock No.:
- 761-3684
- Mfr. Part No.:
- MMBFJ112
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
€5.575
(exc. VAT)
€6.85
(inc. VAT)
Temporarily out of stock
- 2,850 unit(s) shipping from 12 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | €0.223 | €5.58 |
| 100 - 225 | €0.192 | €4.80 |
| 250 - 475 | €0.166 | €4.15 |
| 500 - 975 | €0.146 | €3.65 |
| 1000 + | €0.133 | €3.33 |
*price indicative
- RS Stock No.:
- 761-3684
- Mfr. Part No.:
- MMBFJ112
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | N-Channel Switch | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Drain Source Current Ids | 5 mA | |
| Maximum Drain Source Resistance Rds | 50Ω | |
| Pin Count | 3 | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type N-Channel Switch | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Drain Source Current Ids 5 mA | ||
Maximum Drain Source Resistance Rds 50Ω | ||
Pin Count 3 | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.