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STMicroelectronics SuperMESH3 Type N-Channel MOSFET, 1.8 A, 400 V Enhancement, 4-Pin SOT-223 STN3N40K3

RS Stock No.:: 151-444
Mfr. Part No.:: STN3N40K3
Manufacturer:: STMicroelectronics

STMicroelectronics SuperMESH3 Type N-Channel MOSFET, 1.8 A, 400 V Enhancement, 4-Pin SOT-223 STN3N40K3

Subtotal (1 reel of 4000 units)*

€744.00

(exc. VAT)

€916.00

(inc. VAT)

Temporarily out of stock

Shipping from 27 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4000 +	€0.186	€744.00

*price indicative

RS Stock No.:: 151-444
Mfr. Part No.:: STN3N40K3
Manufacturer:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	400V
	Package Type	SOT-223
	Series	SuperMESH3
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	3.4Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11nC
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.7mm
	Width	3.7 mm
	Height	1.8mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 400V
	Package Type SOT-223
	Series SuperMESH3
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 3.4Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11nC
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.7mm
	Width 3.7 mm
	Height 1.8mm
	Automotive Standard No

Datasheet - STN3N40K3

COO (Country of Origin):: CN

The STMicroelectronics Power MOSFET is the result of improvements applied to Super MESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Extremely high dv/dt capability

Gate charge minimized

Very low intrinsic capacitance

Improved diode reverse recovery characteristics

Zener protected

STMicroelectronics SuperMESH3 Type N-Channel MOSFET, 1.8 A, 400 V Enhancement, 4-Pin SOT-223 STN3N40K3

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