Silicon N-Channel MOSFET, 54 A, 650 V, 3-Pin TO-247 STMicroelectronics STWA65N045M9

The STMicroelectronics N-channel Power MOSFET, I t is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency

Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive