STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG
- RS Stock No.:
- 214-972
- Mfr. Part No.:
- SCTWA40N12G24AG
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
€694.14
(exc. VAT)
€853.80
(inc. VAT)
Last RS stock
- Final 30 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | €23.138 | €694.14 |
*price indicative
- RS Stock No.:
- 214-972
- Mfr. Part No.:
- SCTWA40N12G24AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA40N12G24AG | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.4V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA40N12G24AG | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.4V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency