Nexperia PSM Type N-Channel MOSFET, 200 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R9-40YSBX
- RS Stock No.:
- 219-501
- Mfr. Part No.:
- PSMN1R9-40YSBX
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 tape of 1 unit)*
€2.26
(exc. VAT)
€2.78
(inc. VAT)
In Stock
- 1,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | €2.26 |
| 10 - 99 | €2.04 |
| 100 - 499 | €1.88 |
| 500 - 999 | €1.75 |
| 1000 + | €1.56 |
*price indicative
- RS Stock No.:
- 219-501
- Mfr. Part No.:
- PSMN1R9-40YSBX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 194W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 194W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is optimized to improve EMC performance by up to 6 dB. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, battery isolation, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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