Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 60 A, 1200 V Enhancement F411MR12W2M1HPB76BPSA1

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Subtotal (1 unit)*

€318.81

(exc. VAT)

€392.14

(inc. VAT)

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1 +€318.81

*price indicative

RS Stock No.:
349-250
Mfr. Part No.:
F411MR12W2M1HPB76BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

F4-11MR12W2M1H_B70

Mount Type

Screw

Maximum Drain Source Resistance Rds

23.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

60749, IEC 60747, 60068

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, ensuring optimal performance while saving space. It utilizes leading-edge Wide Bandgap materials, enhancing power efficiency and thermal management. The design boasts very low module stray inductance, reducing power losses and improving switching speed.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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