Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

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€23.57

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RS Stock No.:
349-334
Mfr. Part No.:
IMZA65R015M2HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

103A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

PG-TO247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon CoolSiC Series MOSFET, 650V Drain Source Voltage, 103A Continuous Drain Current - IMZA65R015M2HXKSA1


This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial environments. It operates as an N-channel enhancement device and is supplied in a four-pin PG-TO247-4 through-hole package suited to heat-sinking and conventional assembly methods. The component supports continuous high-current operation and is specified for wide-temperature use, making it appropriate for systems requiring sustained power handling at elevated junction temperatures.

Features and Benefits:


• 650V drain voltage enables high-voltage switching applications
• 103A continuous drain current supports heavy current loads
• 18 mΩ RDS(on) reduces conduction losses for higher efficiency
• 79 nC typical gate charge affords predictable switching behaviour
• 341W maximum power dissipation allows substantial thermal loading
• Rated from -55 °C to 175 °C suits extreme-temperature operation

Applications


• Suitable for industrial motor drive power stages
• Ideal for high-voltage power supplies and inverters
• Used with robust heat-sink assemblies in converters
• Can be used for high-current DC-DC conversion systems
• Appropriate for replacement in through-hole power electronics

What package and mounting method does it use?


It comes in a PG-TO247-4 package with through-hole mounting for soldered or bolted heat-sink attachment.

How does the gate specification affect switching design?


The typical gate charge of 79 nC indicates gate-drive energy and influences chosen driver strength and switching-speed trade-offs.

What thermal limits should designers consider?


The device can dissipate up to 341W under specified conditions and is rated to operate up to 175 °C for high-temperature system designs.

Is it suitable for automotive standard requirements?


It is not specified as meeting automotive standard approvals and should be assessed against automotive qualification needs.

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