Infineon IPF Type N-Channel Power Transistor, 87 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF129N20NM6ATMA1

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Subtotal (1 pack of 2 units)*

€11.61

(exc. VAT)

€14.28

(inc. VAT)

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Per unit
Per Pack*
2 - 18€5.805€11.61
20 - 198€5.22€10.44
200 - 998€4.82€9.64
1000 - 1998€4.47€8.94
2000 +€4.00€8.00

*price indicative

RS Stock No.:
349-408
Mfr. Part No.:
IPF129N20NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

87A

Maximum Drain Source Voltage Vds

200V

Series

IPF

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

234W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC for Industrial Applications, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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