Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

€11.31

(exc. VAT)

€13.912

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18€5.655€11.31
20 - 198€5.095€10.19
200 - 998€4.70€9.40
1000 - 1998€4.355€8.71
2000 +€3.905€7.81

*price indicative

RS Stock No.:
351-909
Mfr. Part No.:
IQD020N10NM5CGSCATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

276A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-WHTFN-9

Series

IQD0

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

107nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

333W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Width

6 mm

Height

0.75mm

Length

5mm

Standards/Approvals

RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

Center-Gate footprint

Industry-standard package

Related links