Infineon HEXFET N-Channel MOSFET, 240 A, 55 V, 7-Pin D2PAK IRF3805S-7PPBF
- RS Stock No.:
- 495-663
- Mfr. Part No.:
- IRF3805S-7PPBF
- Manufacturer:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 495-663
- Mfr. Part No.:
- IRF3805S-7PPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 240 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.55mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 240 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.55mm | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 7-Pin D2PAK-7 IRF3805STRL-7PP
- Infineon HEXFET N-Channel MOSFET 300 A 7-Pin D2PAK-7 AUIRLS3036-7P
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRLS3034TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS7430TRL7PP
- Infineon HEXFET N-Channel MOSFET 100 V, 7-Pin D2PAK-7 IRFS4010TRL7PP
- Infineon HEXFET N-Channel MOSFET 75 V, 7-Pin D2PAK-7 IRFS7730TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRL40SC209
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS3004TRL7PP
