Microchip TN0106 N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS Stock No.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Manufacturer:
- Microchip
Subtotal (1 bag of 1000 units)*
€955.00
(exc. VAT)
€1,175.00
(inc. VAT)
Temporarily out of stock
- Shipping from 30 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | €0.955 | €955.00 |
*price indicative
- RS Stock No.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN0106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.165in | |
| Length | 0.205in | |
| Height | 0.82in | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN0106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 0.165in | ||
Length 0.205in | ||
Height 0.82in | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
- Microchip TN0106 N-Channel MOSFET 60 V, 3-Pin TO-92 TN0106N3-G
- Microchip VN2106 N-Channel Single MOSFETs 60 V Enhancement, 3-Pin TO-92 VN2106N3-G
- Vishay SI N-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- Vishay SI N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Microchip TP0604 N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3
- Microchip 2N7002 N-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- Microchip TN2435 N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN2460 N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3