Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3
- RS Stock No.:
- 653-136
- Mfr. Part No.:
- SIHG11N80AEF-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
€33.675
(exc. VAT)
€41.425
(inc. VAT)
In Stock
- 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 100 | €1.347 | €33.68 |
| 125 + | €1.32 | €33.00 |
*price indicative
- RS Stock No.:
- 653-136
- Mfr. Part No.:
- SIHG11N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.483Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 20.70mm | |
| Length | 16.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.483Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 20.70mm | ||
Length 16.25mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHG11N80AEF-GE3
This power MOSFET is a high-voltage N-channel switch designed for use in power conversion and switching environments. It serves as an enhancement-mode device for controlling high-voltage loads where through-hole mounting is preferred, and it is suitable for operation across a wide ambient temperature range.
Features and Benefits:
• 800V maximum drain-source voltage for high-voltage switching capability
• 0.483Ω Rds(on) limiting conduction losses at rated conditions
• 8A continuous drain current supporting substantial load currents
• 78W maximum power dissipation enabling high-power handling
• 41nC typical gate charge for predictable gate-drive energy
• -55°C to 150°C operating range for extended temperature resilience
• 0.483Ω Rds(on) limiting conduction losses at rated conditions
• 8A continuous drain current supporting substantial load currents
• 78W maximum power dissipation enabling high-power handling
• 41nC typical gate charge for predictable gate-drive energy
• -55°C to 150°C operating range for extended temperature resilience
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with energy-storage and inverter systems
• Can be used for traction auxiliary power electronics
• Applied in through-hole prototyping and serviceable equipment
• Ideal for industrial motor drive switching stages
• Used with energy-storage and inverter systems
• Can be used for traction auxiliary power electronics
• Applied in through-hole prototyping and serviceable equipment
What gate-voltage limits must be observed for safe operation?
Gate-source voltage must not exceed 30V to avoid gate-oxide stress and ensure reliable switching.
How does the package affect mounting and thermal handling?
The TO-247AC through-hole package permits bolted heatsinking and straightforward chassis attachment for effective thermal management.
What forward conduction behaviour can be expected when forward-biased?
Forward conduction exhibits a Vf of around 1.2V, which informs diode conduction losses during body-diode or synchronous-rectification events.
Is this device suitable for automotive-grade applications?
It is not certified to automotive standards and should not be specified where automotive approvals are mandatory.
Related links
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3