Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

RS Stock No.:: 653-177
Mfr. Part No.:: SIHM080N60E-T1-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

Subtotal (1 reel of 3000 units)*

€10,296.00

(exc. VAT)

€12,663.00

(inc. VAT)

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Units	Per unit	Per Reel*
3000 +	€3.432	€10,296.00

*price indicative

RS Stock No.:: 653-177
Mfr. Part No.:: SIHM080N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	PCB
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	500W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	8mm
	Width	7.9mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type PCB
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 500W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 8mm
	Width 7.9mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHM080N60E-T1-GE3

COO (Country of Origin):: CN

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Drain Current - SIHM080N60E-T1-GE3

This power MOSFET is a high-voltage switching device intended for power-conversion and control applications in industrial electronics. It functions as an enhancement-mode N-channel transistor designed to handle high drain-to-source voltages while operating on PCB-mounted assemblies. Its construction suits demanding thermal environments and standard manufacturing processes.

Features and Benefits:

• 600V rating for high-voltage switching applications • 51 A continuous drain current for substantial load handling • 0.084 Ω Rds(on) for reduced conduction losses • 42 nC typical gate charge for predictable gate-drive sizing • 500W power dissipation for elevated power-handling capability • 150 °C maximum operating temperature for high-temperature tolerance

Applications

• Suitable for switch-mode power supplies in industrial automation • Ideal for motor-drive inverter stages in manufacturing equipment • Used for high-voltage DC-DC converters in power distribution • Can be used for hard-switched topologies in testing rigs • Suitable for intermediate circuits in renewable-energy inverters

What mounting style is required for circuit implementation?

It is designed for PCB mounting using a PowerPAK package with four pins to facilitate thermal and electrical connection.

How should gate-drive voltages be selected?

Gate-drive amplitude must not exceed the ±30V gate-source limit and should be chosen to balance switching speed with the 42 nC gate charge to control losses.

What ambient temperature range can it operate within?

The device supports operation down to -55 °C and up to 150 °C junction temperature, enabling use across wide environmental conditions.

How does the package assist thermal management?

The PowerPAK form factor provides a Compact thermal path to the PCB, helping to dissipate up to the specified 500W under appropriate board-level cooling strategies.