STMicroelectronics MDmesh M5 N-Channel MOSFET, 33 A, 650 V, 3-Pin D2PAK STB42N65M5
- RS Stock No.:
- 103-1994
- Mfr. Part No.:
- STB42N65M5
- Manufacturer:
- STMicroelectronics
Subtotal (1 reel of 1000 units)**
€6,915.00
(exc. VAT)
€8,505.00
(inc. VAT)
1000 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Real time stock check
Units | Per unit | Per Reel** |
---|---|---|
1000 + | €6.915 | €6,915.00 |
**price indicative
- RS Stock No.:
- 103-1994
- Mfr. Part No.:
- STB42N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | D2PAK (TO-263) | |
Series | MDmesh M5 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 79 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 190 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Width | 10.4mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 10.75mm | |
Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
Height | 4.6mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Series MDmesh M5 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 79 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Width 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.75mm | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Height 4.6mm | ||
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