Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	60 V
	Series	PowerTrench
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	11 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	245 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.65mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	61 nC @ 10 V
	Length	10.67mm
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 60 V
	Series PowerTrench
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 11 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 245 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.65mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 61 nC @ 10 V
	Length 10.67mm
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK FDB050AN06A0

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

Related links