onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7
- RS Stock No.:
- 185-9328
- Mfr. Part No.:
- NTBS2D7N06M7
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 3 units)**
€22.18
(exc. VAT)
€27.28
(inc. VAT)
1557 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Real time stock check
Units | Per unit | Per Pack** |
---|---|---|
3 - 27 | €7.393 | €22.179 |
30 - 297 | €6.373 | €19.119 |
300 + | €5.523 | €16.569 |
**price indicative
- RS Stock No.:
- 185-9328
- Mfr. Part No.:
- NTBS2D7N06M7
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 176 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.25V | |
Height | 4.58mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 176 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.25V | ||
Height 4.58mm | ||
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