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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	60 V
	Series	UltraFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	23 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Typical Gate Charge @ Vgs	38 nC @ 10 V
	Transistor Material	Si
	Length	6.73mm
	Number of Elements per Chip	1
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 60 V
	Series UltraFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 23 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Typical Gate Charge @ Vgs 38 nC @ 10 V
	Transistor Material Si
	Length 6.73mm
	Number of Elements per Chip 1
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Height 2.39mm
	Minimum Operating Temperature -55 °C

Datasheet

COO (Country of Origin):: US

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UltraFET N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK HUFA76429D3ST-F085

UltraFET® MOSFET, Fairchild Semiconductor

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