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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	75 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-247
	Series	UltraFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	375 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	20.82mm
	Typical Gate Charge @ Vgs	118 nC @ 10 V, 206 nC @ 20 V
	Number of Elements per Chip	1
	Width	15.87mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	4.82mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 75 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-247
	Series UltraFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 375 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 20.82mm
	Typical Gate Charge @ Vgs 118 nC @ 10 V, 206 nC @ 20 V
	Number of Elements per Chip 1
	Width 15.87mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 4.82mm

FDH5500_F085, N-Channel UltraFET Power MOSFET 55V, 75A, 7mOhm

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UltraFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 FDH5500_F085

UltraFET® MOSFET, Fairchild Semiconductor

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