IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247 IXTH110N25T

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€8.17

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€10.05

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1 - 4€8.17
5 - 9€7.52
10 - 24€7.07
25 - 49€6.10
50 +€5.83

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RS Stock No.:
125-8047
Distrelec Article No.:
302-53-421
Mfr. Part No.:
IXTH110N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-247

Series

Trench

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

694W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

157nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.3 mm

Height

21.46mm

Length

16.26mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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