N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5ATMA1

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5ATMA1

Subtotal (1 reel of 5000 units)**

€2,815.00

(exc. VAT)

€3,460.00

(inc. VAT)

Stock check temporarily unavailable - call for stock availability

Units	Per unit	Per Reel**
5000 +	€0.563	€2,815.00

**price indicative

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Manufacturer:: Infineon

Infineon OptiMOS™5 Power MOSFETs

Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1

This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.

Features & Benefits

• Supports high current applications with a maximum continuous drain current of 223A
• Very low on-resistance enhances energy efficiency during operation
• Capable of withstanding a maximum drain-source voltage of 25V
• Features a compact SuperSO8 package for efficient surface mounting
• Delivers effective thermal performance for heat dissipation
• 100% avalanche tested to ensure robust reliability

Applications

• Used in high-performance buck converters for efficient voltage regulation
• Suitable for power management in consumer electronics
• Implemented in automotive where compact design is crucial
• Utilised in renewable energy systems for effective power conversion

What is the optimal operating temperature range for installation?

The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.

Can it be used for synchronous rectification applications?

Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.

What handling precautions should be taken during installation?

Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.

How does the gate charge impact performance?

A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.

Is this component RoHS compliant?

Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	25 V
Series	OptiMOS™ 5
Package Type	SuperSO8 5 x 6
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1.25 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	74 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+16 V
Typical Gate Charge @ Vgs	43 nC @ 10 V
Length	5.49mm
Transistor Material	Si
Width	6.35mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.1mm
Forward Diode Voltage	1V