Infineon HEXFET N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-220AB AUIRFB3207
- RS Stock No.:
- 145-8617
- Mfr. Part No.:
- AUIRFB3207
- Manufacturer:
- Infineon
Subtotal (1 tube of 50 units)*
€77.90
(exc. VAT)
€95.80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | €1.558 | €77.90 |
*price indicative
- RS Stock No.:
- 145-8617
- Mfr. Part No.:
- AUIRFB3207
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.66mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.66mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
- COO (Country of Origin):
- MX
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