N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF

RS Stock No.:: 145-9657
Mfr. Part No.:: IRFB7530PBF
Manufacturer:: Infineon

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€84.10

(exc. VAT)

€103.45

(inc. VAT)

900 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Tube**
50 - 50	€1.682	€84.10
100 - 200	€1.475	€73.75
250 +	€1.438	€71.90

**price indicative

RS Stock No.:: 145-9657
Mfr. Part No.:: IRFB7530PBF
Manufacturer:: Infineon

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF

This high current N-channel MOSFET is engineered for a range of power applications. Its advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits

• Maximum continuous drain current of 195A
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety

Applications

• Used in brushed motor drive
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?

The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?

Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?

It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?

This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.

What are the implications of its low RDS(on) for circuit design?

A low RDS(on) minimises conduction losses, thereby enhancing overall system efficiency and enabling smaller heat sinks and improved thermal performance in circuit designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	195 A
Maximum Drain Source Voltage	60 V
Series	StrongIRFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	10.67mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	274 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	4.83mm
Height	16.51mm
Minimum Operating Temperature	-55 °C