Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 165-2751
- Mfr. Part No.:
- SI9933CDY-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 2500 units)*
€492.50
(exc. VAT)
€605.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | €0.197 | €492.50 |
*price indicative
- RS Stock No.:
- 165-2751
- Mfr. Part No.:
- SI9933CDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin ChipFET
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N 8 A 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P 8 A 8-Pin SOIC