Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

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Subtotal (1 pack of 20 units)*

€13.86

(exc. VAT)

€17.04

(inc. VAT)

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Per Pack*
20 - 80€0.693€13.86
100 - 180€0.589€11.78
200 - 480€0.499€9.98
500 - 980€0.464€9.28
1000 +€0.444€8.88

*price indicative

Packaging Options:
RS Stock No.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41.5nC

Maximum Power Dissipation Pd

3.2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

4 mm

Length

5mm

Height

1.55mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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