Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRRPBF
- RS Stock No.:
- 165-5896
- Mfr. Part No.:
- IRF540NSTRRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 800 units)**
€892.80
(exc. VAT)
€1,098.40
(inc. VAT)
2400 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Real time stock check
Units | Per unit | Per Reel** |
---|---|---|
800 - 800 | €1.116 | €892.80 |
1600 - 1600 | €1.06 | €848.00 |
2400 + | €0.993 | €794.40 |
**price indicative
- RS Stock No.:
- 165-5896
- Mfr. Part No.:
- IRF540NSTRRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 44 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
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