Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF

RS Stock No.:: 541-1269
Distrelec Article No.:: 303-41-344
Mfr. Part No.:: IRFP140NPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC IRFP140NPBF

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Units	Per unit
1 - 9	€1.93
10 - 49	€1.66
50 - 99	€1.55
100 - 249	€1.45
250 +	€1.33

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RS Stock No.:: 541-1269
Distrelec Article No.:: 303-41-344
Mfr. Part No.:: IRFP140NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF

This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits

• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications

• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?

It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?

A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?

It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?

Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	5.3mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	94 nC @ 10 V
Length	15.9mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	20.3mm
Forward Diode Voltage	1.3V