Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	38 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-247
	Series	CoolMOS™ C6
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	99 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	278 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	119 nC @ 10 V
	Length	16.13mm
	Width	5.21mm
	Height	21.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 38 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-247
	Series CoolMOS™ C6
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 99 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 278 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 119 nC @ 10 V
	Length 16.13mm
	Width 5.21mm
	Height 21.1mm
	Minimum Operating Temperature -55 °C

Infineon CoolMOS™ C6 N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon CoolMOS™C6/C7 Power MOSFET

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