N-Channel MOSFET, 80 A, 40 V, 3-Pin TO-220 Infineon IPP039N04LGXKSA1
- RS Stock No.:
- 165-8156
- Mfr. Part No.:
- IPP039N04LGXKSA1
- Manufacturer:
- Infineon
Subtotal (1 tube of 50 units)**
€53.90
(exc. VAT)
€66.30
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tube** |
|---|---|---|
| 50 - 50 | €1.078 | €53.90 |
| 100 - 200 | €0.851 | €42.55 |
| 250 - 450 | €0.819 | €40.95 |
| 500 - 950 | €0.776 | €38.80 |
| 1000 + | €0.744 | €37.20 |
**price indicative
- RS Stock No.:
- 165-8156
- Mfr. Part No.:
- IPP039N04LGXKSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.572mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.572mm | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 59 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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