Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	52 A
	Maximum Drain Source Voltage	200 V
	Series	UniFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	49 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	357 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Length	9.98mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	49 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	10.16mm
	Height	4.572mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 52 A
	Maximum Drain Source Voltage 200 V
	Series UniFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 49 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 357 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Length 9.98mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 49 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 10.16mm
	Height 4.572mm
	Minimum Operating Temperature -55 °C

onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

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