N-Channel MOSFET, 15 A, 500 V, 3-Pin D2PAK onsemi FDB15N50
- RS Stock No.:
- 166-2549
- Mfr. Part No.:
- FDB15N50
- Manufacturer:
- onsemi
Subtotal (1 reel of 800 units)**
€1,707.20
(exc. VAT)
€2,100.00
(inc. VAT)
Temporarily out of stock - back order for despatch 20-08-2025, delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Reel** |
|---|---|---|
| 800 + | €2.134 | €1,707.20 |
**price indicative
- RS Stock No.:
- 166-2549
- Mfr. Part No.:
- FDB15N50
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | D2PAK (TO-263) | |
| Series | UniFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 11.33mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type D2PAK (TO-263) | ||
Series UniFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 11.33mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
Related links
- N-Channel MOSFET 500 V, 3-Pin D2PAK onsemi FDB15N50
- N-Channel MOSFET 150 V, 3-Pin D2PAK onsemi FDB2552
- N-Channel MOSFET 75 V, 3-Pin D2PAK onsemi FDB088N08
- N-Channel MOSFET 150 V, 3-Pin D2PAK onsemi NTB011N15MC
- N-Channel MOSFET Transistor & Diode 100 V, 3-Pin D2PAK onsemi NTBS9D0N10MC
- N-Channel MOSFET 650 V, 3-Pin D2PAK onsemi FCB199N65S3
- N-Channel MOSFET 100 V, 3-Pin D2PAK onsemi FDB035N10A
- N-Channel MOSFET 800 V, 3-Pin D2PAK onsemi FQB4N80TM