onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 166-2858
Mfr. Part No.:: 2N7002K
Manufacturer:: onsemi

onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23

Bulk discount available

Subtotal (1 reel of 3000 units)*

€129.00

(exc. VAT)

€159.00

(inc. VAT)

In Stock

21,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 6000	€0.043	€129.00
9000 - 21000	€0.036	€108.00
24000 - 42000	€0.035	€105.00
45000 - 96000	€0.033	€99.00
99000 +	€0.032	€96.00

*price indicative

RS Stock No.:: 166-2858
Mfr. Part No.:: 2N7002K
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Series	2N7002K
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.7nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	350mW
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	2.92mm
	Height	1.2mm
	Standards/Approvals	No
	Width	1.3 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Series 2N7002K
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.7nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 350mW
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 2.92mm
	Height 1.2mm
	Standards/Approvals No
	Width 1.3 mm
	Automotive Standard AEC-Q101

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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