IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 168-4578
- Mfr. Part No.:
- IXFN360N15T2
- Manufacturer:
- IXYS
Subtotal (1 tube of 10 units)*
€484.45
(exc. VAT)
€595.87
(inc. VAT)
Temporarily out of stock
- Shipping from 02 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 + | €48.445 | €484.45 |
*price indicative
- RS Stock No.:
- 168-4578
- Mfr. Part No.:
- IXFN360N15T2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-227 | |
| Series | GigaMOS TrenchT2 HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 715nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-227 | ||
Series GigaMOS TrenchT2 HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 715nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.07kW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 9.6mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227