Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

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Subtotal (1 pack of 10 units)*

€9.70

(exc. VAT)

€11.90

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40€0.97€9.70
50 - 90€0.88€8.80
100 - 990€0.677€6.77
1000 +€0.418€4.18

*price indicative

Packaging Options:
RS Stock No.:
171-2492
Mfr. Part No.:
TJ8S06M3L
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

27W

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Width

7 mm

Length

6.5mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -60V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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