Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	ROHM
	Channel Type	P
	Maximum Continuous Drain Current	13 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Series	RD3P130SP
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	230 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	20 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	40 nC @ 10 V
	Length	6.8mm
	Width	6.4mm
	Height	2.3mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ROHM
	Channel Type P
	Maximum Continuous Drain Current 13 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Series RD3P130SP
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 230 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 20 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 40 nC @ 10 V
	Length 6.8mm
	Width 6.4mm
	Height 2.3mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

ROHM RD3P130SP P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK RD3P130SPTL1

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