Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	13 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	205 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	66 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	6.73mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	58 nC @ 10 V
	Transistor Material	Si
	Width	6.22mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 13 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 205 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 66 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 6.73mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 58 nC @ 10 V
	Transistor Material Si
	Width 6.22mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 2.39mm

Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRPBF

P-Channel Power MOSFET 100V to 150V, Infineon

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